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  preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. november 2008 rev 1 1/8 8 2stf2550 2STN2550 low voltage high performance pnp power transistors features very low collector-emitt er saturation voltage high current gain characteristic fast switching speed surface mounting devices in medium power sot-89 and sot-223 packages applications emergency lighting led motherboard and hard disk drive mobile equipment battery charger voltage regulation description the 2stf2550 and 2STN2550 are pnp transistors manufactured using new ?pb-hcd? (power bipolar high current density) technology. the resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. figure 1. internal schematic diagram sot-89 1 2 4 3 sot-223 4 3 2 1 table 1. device summary order codes marking package packaging 2stf2550 2550 sot-89 tape and reel 2STN2550 n2550 sot-223 www.st.com
electrical ratings 2stf2550 - 2STN2550 2/8 1 electrical ratings table 2. absolute maximum rating symbol parameter value unit 2stf2550 2STN2550 sot-89 sot-223 v ces collector-emitter voltage (v ce = 0) -50 v v ceo collector-emitter voltage (i b = 0) -50 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current -5 a i cm collector peak current (t p < 5 ms) -10 a i b base current -1 a p tot total dissipation at t amb = 25 c 1.4 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter sot-89 sot-223 unit r thj-amb (1) 1. device mounted on pcb area of 1 cm 2 thermal resistance junction-amb __ max 89 78 c/w
2stf2550 - 2STN2550 electrical characteristics 3/8 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. electrical characteristics symbol parameter test cond itions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = -50 v -0.1 a i ebo emitter cut-off current (i c = 0) v eb = -4 v -0.1 a v (br)cbo collector-base breakdown voltage (i e = 0) i c = -100 a-50 v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 1.5% collector-emitter breakdown voltage (i b = 0) i c = -10 ma -50 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = -100 a-5 v h fe (1) dc current gain i c = -0.5 a v ce = -2 v i c = -2 a v ce = -2 v i c = -3 a v ce = -2 v i c = -5 a v ce = -5 v 110 80 350 70 350 v ce(sat) (1) collector-emitter saturation voltage i c = -3 a i b = -300 ma -0.39 -0.55 v v be(sat) (1) base-emitter saturation voltage i c = -3 a i b = -300 ma -1 -1.2 v c cbo collector-base capacitance (i e = 0) v cb = -10 v, f = 1 mhz 30 pf t on t off resistive load turn-on time turn-off time i c = -1.5 a v cc = -10 v i b1 = -i b2 = -150 ma 80 3 00 ns ns
package mechanical data 2stf2550 - 2STN2550 4/8 3 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
2stf2550 - 2STN2550 package mechanical data 5/8 dim. mm. min. typ max. a 1. 8 0 a1 0.02 0.1 b 0.60 0.70 0. 8 5 b1 2.90 3 .00 3 .15 c 0.24 0.26 0. 3 5 d6. 3 0 6.50 6.70 e2. 3 0 e1 4.60 e 3 . 3 0 3 .50 3 .70 h 6.70 7.00 7. 3 0 v 10 o s ot-22 3 mechanical data 0046067_l
package mechanical data 2stf2550 - 2STN2550 6/8 dim. mm mil s min. typ. max. min. typ. max. a 1.4 1.6 55.1 6 3 .0 b 0.44 0.56 17. 3 22.0 b1 0. 3 6 0.4 8 14.2 1 8 .9 c0. 3 5 0.44 1 3 . 8 17. 3 c1 0. 3 5 0.44 1 3 . 8 17. 3 d 4.4 4.6 17 3 .2 1 8 1.1 d1 1.62 1. 83 6 3 . 8 72.0 e 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61. 8 e1 2.92 3 .07 115.0 120.9 h 3 .94 4.25 155.1 167. 3 l0. 8 91.2 3 5.0 47.2 p025h s ot- 8 9 mechanical data
2stf2550 - 2STN2550 revision history 7/8 4 revision history table 5. document revision history date revision changes 12-nov-2008 1 initial release
2stf2550 - 2STN2550 8/8 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorize representative of st, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems, where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as ?automotive grade? may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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